Power MOSFET / FREDFET
Microsemi former APT
Microsemi Power Semiconductor Catalogue:
Family | Function | Package Style | RoHS |
Modules: Boost Chopper, Dual Boost Chopper, Buck Chopper, Dual Buck Chopper, Full Bridge, Full Bridge + Series and Parallel Diodes, Asymmetrical Bridge, Triple Phase Leg, Phase Leg, Phase Leg + Series Diodes, Phase Leg + Series and Parallel Diodes, Dual Common Source, Triple dual Common Source, Single Switch, Single Switch + Series Diode, Single Switch + Series and Parallel Diodes, Boost Chopper with SiC Diodes, Phase Leg + Series and SiC Parallel Diodes, Full Bridge + Series and SiC Parallel Diodes . COOLMOS Power Modules with SiC Diodes: Boost Chopper with SiC Diodes, Phase Leg + Series and SiC Parallel Diodes, Full Bridge + Series and SiC Parallel Diodes . | D1, D3, E2,P2, E3/P3, SOT-227,SP3, SP4, SP6, SP6-P |
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Super Juntion MOSFET: These devives are available in 600 V and 800 V ratings. | TO-220(K), D Pak(S), TO247(B), T-MAX(B2), ISOTOP(J) SOT-227 |
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Linear MOSFET: These devives are available in 500 V, 600 V and 1000 V ratings. Features are: High current & > 200V >100msec, used aas variable power resistor, soft start application (limit surge current), linear amplifier circuit. Applications: Active loads above 200 V such as DC dynamic loads for testing power supplies, batteries, fuel cells ect. Hidh voltage, high current constant current sources. | T-MAX(B2), TO-264(L), ISOTOP(J) SOT-227 |
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MOS 7: These devives are available in 200 V, 300 V, 500 V, 600 V, 800 V, 1000 V and 1200 V ratings. Features are: Conduction Losses, low R DS(on), low switching losses (low gate charge), higher efficiency and more power in less space, high gate rupture voltage, high noise immunity, high commutating dv/dt capability. Applications: Solar inverters, high performance SMPS, industrial equipment, battery chargers. FREDFETS: for application utilizing the intrinsic body drain diode. | TO-220(K), D Pak(S), TO247(B), T-MAX(B2), TO-264(L), 264-MAX(L2), ISOTOP(J) SOT-227 |
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MOS V: These devives are available in 100 V, 200 V, 300 V, 400 V, 500 V, 600 V, 800, 1000 V, 1200 V and 1400 V ratings. Features are: Faster intrinsic diode reverse recovery, the reverse recovery time (t rr) has been reduced thereby eliminating the external FRED and Shottky rectifiers in certain circuit configurations.Improved ruggedness, the ruggedness of the intrinsic diode has also been improved, allowing for improved commutating dv/dt ratings. Applications: Industrial equipment, welders, battery chargers. | TO-220(K), D Pak(S), TO247(B), T-MAX(B2), TO-264(L), 264-MAX(L2), ISOTOP(J) SOT-227 |
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MOS V FREDFET: These devives are available in 100 V, 200 V, 300 V, 400 V, 500 V, 600 V, 800, 1000 V, 1200 V and 1400 V ratings. Features are: Faster intrinsic diode reverse recovery, the reverse recovery time (t rr) has been reduced thereby eliminating the external FRED and Shottky rectifiers in certain circuit configurations.Improved ruggedness, the ruggedness of the intrinsic diode has also been improved, allowing for improved commutating dv/dt ratings. Applications: Industrial equipment, welders, battery | TO-220(K), D Pak(S), TO247(B), T-MAX(B2), TO-264(L), 264-MAX(L2), ISOTOP(J) SOT-227 |
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MOS 8: These devives are available in 500 V, 600 V, 800, 1000 V and 1200 V ratings. Features are: Fast switching, low gate charge, lower cost avalanche energy rated, RoHS Compliant, low EMI, ultra low Crss for improved noise immunity. Application: PFC and other boost converter, Buck converter, Two switch forward (asymmetrical bridge), Single switch forward, Flyback, Inverters. | TO-220(K), D Pak(S), TO247(B), T-MAX(B2), TO-264(L), 264-MAX(L2), ISOTOP(J) SOT-227 |
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MOS 8 FREDFET: These devives are available in 500 V, 600 V, 800, 1000 V and 1200 V ratings. Features are: Fast switching, low gate charge, lower cost avalanche energy rated, RoHS Compliant, low EMI, ultra low Crss for improved noise immunity. Application: PFC and other boost converter, Buck converter, Two switch forward (asymmetrical bridge), Single switch forward, Flyback, Inverters. FREDFETS: for application utilizing the intrinsic body drain diode. | TO-220(K), D Pak(S), TO247(B), T-MAX(B2), TO-264(L), 264-MAX(L2), ISOTOP(J) SOT-227 |
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FEATURES | • Fast Switching | • Avalanche Energy Rated |
| • Ultra Low Crss for Improved Noise Immunity | |
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APPLICATIONS | • PFC and other boost converter | |
Power MOS 8 is a new family of high speed, high voltage N-channel switch-mode power transistors with lower EMI characteristics and lower cost compared to previous generation devices. These new MOSFETs /FREDFETs have been optimized for both hard and soft switching in high frequency, high voltage applications rated above 500W. FREDFETs have a fast recovery body diode characteristic, providing high commutation dv/dt ruggedness and high reliability in ZVS circuits.
Neuheit:
Neue Power MOS 8 Generation
Microsemi früher APT stellt mit der MOS 8 Familie eine neue Generation von schnellen, Hochspannungsschaltransistoren (N-Kanal) mit einer tiefen EMI-Charaktersistik und tieferen Kosten im Vergleich zur Vorgängergeneration vor.
Diese MOSFET's / FREDFET's wurden für hartes und weiches Schalten bei hohen Frequenzen, in Hochspannungsanwendungen über 500 Watt optimiert.
Die FREDFET's haben eine "fast recovery Body Diode"- Erholungscharakteristik, die sich durch bessere dv/dt-Fähigkeit auszeichnen.
Die Hauptvorteile der aus bisher 15 Typen bestehenden Familie sind:
- Verbesserte Immunität gegen Oszillation und reduzierte EMI,
- tiefer R(Dson),
- tiefer "Gate Charge",
- geringe Schaltverluste,
- kleinerer Thermowiderstand,
- Avalanche Energy rated,
- hohe Schaltgeschwindigkeit
- tiefere Kosten,
Ideale Anwendungen bei denen hoher Wirkungsgrad und grosse Leistungen gefragt sind, sind Solarinverter, Schweissmaschinen, Plasmaschneidgeräte, Induktionsöfen, USV und Batterieladegeräte.
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